Low Power Consumption 10-Gb/s SiGe Modulator Drivers with 9V{sub}(PP) Differential Output Swing Using Intrinsic Collector-Base Capacitance Feedback Network

摘要

A novel intrinsic collector-base capacitance (C{sub}(CB)) feedback network (ICBCFN) is incorporated into the conventional cascode circuit configuration to implement a 10-Gb/s modulator driver in 0.35μm SiGe BiCMOS technology. The driver integrated circuit (IC) could output 9V{sub}(PP) differential or 4.5V{sub}(PP) single-ended (S.E.) output swing with rise/fall time less than 29ps while it consumes power as low as 0.8W. The performances and simulation results compared with precedent works are also shown in this paper. The proposed driver consumes the lowest power and occupies the smallest die area, and its output swing spans wider than the ever-reported silicon-based modulator drivers.