Characterization of advanced materials for optoelectronics by using UV lasers and four-wave mixing techniques

摘要

Development of four-wave mixing on picosecond free-carrier grating technique and its recent applications to probe carrier dynamics in various het-erostructures are presented. Carrier plasma parameters, such as carrier lifetimes and bipolar/monopolar diffusion coefficients as well as surface recombination velocities in heterostructures of GaN/sapphire, InGaN/GaN, CdTe/GaAs, ZnTe homoepitaxial structures, and heavily doped p-GaAs double heterostructures have been determined. It has been shown that investigation of electrical properties allows characterization of epilayer and interface quality as well as related changes of structural properties by optical means.