Morphological Dynamic Simulation of Cluster of Atoms Deposition Process

摘要

To date, the fabrication of thin solid films is the fundamental and important parts of the high technology. The requirements of the high density, homogeneity and strength are the most important considerations in the final product. The working parameters of the sputtering process should be controlled appropriately in order to get the better qualities of the film. The controlled parameters include incident energy, deposition rate, temperature of the substrate, incident angle, etc. In this research, the molecular dynamics is used to simulate the sputtering process. The Tight-binding potential is adopted to model the interaction between atoms. The simulation of the trajectory of the incident atoms can then be obtained. The influence of the working parameters on the deposition mechanism can be evaluated. From the results of this study, we could understand the mechanism of the process parameters in the atomic scale.