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Dynamic Feedback Recipe in CMP Production line

机译:CMP生产线动态反馈配方

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摘要

Conventionally wafers are run under a fixed recipe: variables input including slurry chemicals, flow rate, temperature, backside pressure and mechanical parameters, etc. regardless of the deterioration of pad profile, backing film and related consumables. This simplifies the CMP polishing procedure in the production line at the cost of yield loss. However, because of the variation of pad profile during polishing, pad deterioration worsens the uniformity nonlinearly in the processing. In order to solve the above issue, a dynamic recipe for compensating the pad profile variation is investigated in this study. The result shows that a suitable feedback mechanism in backside pressure can improve the within-wafer non-uniformity significantly.
机译:传统上晶片在固定的配方中运行:变量输入,包括浆料化学品,流速,温度,背面压力和机械参数等。无论垫型材,背衬膜和相关耗材的劣化如何。这简化了生产线中的CMP抛光过程,以屈服损失成本。然而,由于抛光期间垫轮廓的变化,焊盘劣化在处理中非线性地使均匀性变得致恶化。为了解决上述问题,在本研究中研究了用于补偿垫轮廓变化的动态配方。结果表明,背面压力的合适反馈机制可以显着提高晶片内不均匀性。

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