Modeling analysis of gas-phase generated silicon clusters in a rotating disk CVD reactor

摘要

The two-dimensional heat and mass transport model extended to cover silicon clustering in the gas phase is applied for analyzing the silicon CVD in a vertical rotating disc reactor. Silylene is found to be most responsible for the silicon film growth. Computations predict a thin particle layer just above the susceptor due to thermophoresis. This agrees with experimental observations. The layer position is numerically studied as a function of the susceptor rotation rate.