We propose a new method to simulate the interface diffusion in the solid-state bonding-process. This method is more significant under the condition of low pressure and low temperature. It is available for the bonding of two bodies which consist of the atoms of the same kind and have slight surface roughness. In a conventional method, the elastic deformation during the bonding process is considered. The interface diffusion is enhanced and the bonding time decreases when the external pressure changes at appropriate frequency. In order to clarify the enhancement effect of changing the pressure, we examine three cases, i.e., the 1st pressure type is constant pressure, the 2nd type is zero pressure, and the 3rd type is the on-off pressure. Our results suggest the on-off pressure decreases the required time for the perfect bonding if we choose on appropriate frequency.
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