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外文会议>Meeting of the Electrochemical Society
>Smartphones: Driving Technology to More than Moore 3-D Stacked Devices/Chips and More Moore FinFET 3-D Doping with High Mobility Channel Materials from 20/22nm Production to 5/7nm Exploratory Research
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Smartphones: Driving Technology to More than Moore 3-D Stacked Devices/Chips and More Moore FinFET 3-D Doping with High Mobility Channel Materials from 20/22nm Production to 5/7nm Exploratory Research
3-D bulk-FinFET at 22nm node uses (551) 8° tapered Fin sidewall with 45° high tilt implantation for doping, eSiGe S/D for PMOS channel compressive strain and amorphous implant SPC (solid phase crystallization) dislocation defects for NMOS channel tensile strain. For 14nm node taller Fins with vertical sidewalls and partial recess embedded n+ S/D was added. 7/10nm node will use direct high mobility channel materials 50% SiGe to 100% Ge. To avoid CVD Ge or SiGe epi defects liquid phase crystallization (LPC) by laser melt annealing is an alternative using amorphous-Ge dose control deposition by ion implantation and at 5nm node gate-all-around (GAA) nano-wire. Residual implant damage into Ge material creates high level of acceptors up to 7E19/cm~3 requiring high temperature annealing above 600°C to annihilate and establish stable p+ or n+ dopant activation for ultra-shallow junctions. For USJ n+ junctions in Ge, melt controlled junction depth using Sb dopant results in highest dopant activation >1E21/cm~3 at sub-10nm junction depth. Si-capping layer offers lowest n+ Ge junction leakage and Sn co-implantation enables surface strain-Ge engineering for higher channel mobility.
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机译:在22nm节点时使用(551)8°锥形翅片侧壁,带45°锥形翅片,用于掺杂,用于PMOS通道压缩菌株和非晶注入SPC(固相结晶)脱位缺陷NMOS通道的eSIGE S / D.拉伸应变。对于具有垂直侧壁和部分凹陷嵌入N + S / D的14nm节点更高的翅片。 7/10NM节点将使用直接高迁移率渠道材料50%SiGe至100%Ge。为了避免CVD Ge或SiGe EPI缺损液相结晶(LPC)通过激光熔化退火是通过离子注入和5nm节点门 - 全线(Gaa)纳米线的替代方法。 GE材料的残余植入物损伤产生高达7E19 / cm〜3的高水平,需要高于600℃的高温退火,以湮灭并建立稳定的P +或N +掺杂剂活化,用于超浅线。对于GE中的USJ N +结,使用Sb掺杂剂的熔体控制结深度导致副10nm结深度的掺杂剂活化> 1e21 / cm〜3。 Si-Cappapp层提供最低的N + GE结泄漏,SN共植入能够实现表面应变-GE工程,用于更高的通道移动性。
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