Advanced Spatially Resolved Electronic Structure Analysis

摘要

When Si 2p → CB absorption spectra are obtained with high accuracy, ELNES structure within 2eV of the absorption edge summarize the symmetry- and site-projected bandstructure of the solid. In a 30°-ISF-90° misfit dislocation, the broken crystal symmetry at the ISF is splits the L_1 Brillouin Zone critical point into two contributions. This L_1 splitting also occurs at the 30° partial dislocation core but not at the 90° partial. Near edge in-gap states are prominent at both dislocations. An extended, kin-based structural model is suggested for the 90° dislocation to understand the spectral results.