Towards Better Understanding of High Efficiency Cd-free CIGS Solar Cells Using Atomic Layer Deposited Indium Sulfide Buffer Layers

摘要

This paper presents optimization studies on the formation of cadmium free buffer layers for high efficiency copper indium diselenide (CIGS) thin film solar cells using a vapor phase route. Indium sulfide layers have been deposited on CIGS substrates by Atomic Layer Deposition (ALD) at substrate temperatures between 140 and 260 °C using indium acetylacetonate and hydrogen sulfide precursors. The parametric study of the deposition temperature shows an optimal value at about 220 °C, leading to an efficiency of 16.4% which is a technological breakthrough. The analysis of the device shows that indium sulfide layers give an improvement of the blue response of the cells as compared a standard CdS processed cell, due to a high apparent band gap (2.7-2.8 eV), higher open circuit voltages (up to 665 mV) and fill factor (78%). This denotes high interface quality of the system. Atomic diffusion processes of sodium and copper in the buffer layer are evidenced.