Al-doped ZnO films were deposited on glass in an in-line system by reactive mid-frequency (MF) magnetrom sputtering.The influence of substrate position on the film properties as well as the relation between static and dynamic deposition are studied.All films showed low resistivity (<4X10~(-4) OMEGAcm) and excellent transparency (>80% in the visible region).The resistivity rho for substrate positions above the sputter craters (race tracks) is up to a factor of two higher than on other positions where the smallest rho is 1.9X10~(-4) OMEGAcm.Major differences in statically deposited films as a function of the position on the substrate are found for the structural film properties as characterized by x-ray diffraction (XRD) and etching behaviour.The different surface textures obtained after etching are directly related to variations in the shoft-circuit current densities of amorphous silicon p-i-n solar cells prepared on these etched ZnO:Al films.
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