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Novel Process Methodology for Uniformly Cutting Nanotubes

机译:均匀切割纳米管的新型工艺方法

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We present a novel process methodology for the controlled cutting of nanotubes and other nanostructures to well-controlled lengths and sizes. The continuing increase in complexity of electronic devices, coupled with decreasing size of individual elements, are placing more stringent demands on the resolution and accuracy of fabrication patterns. The ability to fabricate on a nanometer scale guarantees a continuation in miniaturization of functional devices. Particularly interesting is the application of nanotubes1 chemical and electronic properties which vary with their dimensions and structure. One realization of this process includes the use of photolithography or electron beam lithography to place protective resist patterns over the nanostmctures to be cut. Those sections which are not covered by the resist pattern are removed by reactive ion etching. This is a scaleable process which permits the simultaneous cutting of many nanostructures and ensembles of nanostructures. The lengths, shapes or length distributions can be predicted from theory and thus specified for a given application requirement. Nanostructures which can be cut in this process include nanotubes, nanofibers and nanoplanes. Large scale production of nanostructures with uniform length or specific size-distribution can be used in electronic applications such as field-emission transistors, optoelectronic elements, single electron devices and sensors.
机译:我们提出了一种用于控制纳米管和其他纳米结构的控制切割的新工艺方法,以控制良好控制的长度和尺寸。电子设备复杂性的连续性增加,与单个元素的尺寸降低,对制造图案的分辨率和准确性进行更严格的要求。在纳米级上制造的能力保证了功能装置的小型化的延续。特别是有趣的是纳米管1化学和电子性质的应用,其尺寸和结构变化。该过程的一个实现包括使用光刻或电子束光刻,以将保护性抗蚀剂图案放置在待切割的纳米杆上。通过反应离子蚀刻除去不被抗蚀剂图案覆盖的那些部分。这是一种可扩展的方法,允许同时切割许多纳米结构和纳米结构的整体。可以从理论预测长度,形状或长度分布,从而为给定的应用程序要求指定。可以在该方法中切割的纳米结构包括纳米管,纳米纤维和纳米烷基。具有均匀长度或特定尺寸分布的大规模生产纳米结构可用于电子应用,例如现场发射晶体管,光电元件,单电子器件和传感器。

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