I-V characteristics of K(Ta0.65Nb0.35)O3 thin film prepared by pulsed laser

机译：脉冲激光器制备的K（Ta0.65NB0.35）k（Ta0.65nb0.35）O-V的特征

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The I-V characteristics of K(Ta$-0.65$/Nb$-0.35$/)O$-3$/ thin films being prepared by PLD method on Si(100) were found to be Ohmic at low fields and space-charge-limited at higher fields, and this phenomena was correctly explained by SCLC theory.

机译：k（ta $ -0.65 $ / nb $-$ 35 $ /）的IV特征在SI（100）上由PLD方法编写的$ -3 $ /薄膜在低场和空间充电时是欧姆在较高领域有限，SCLC理论正确解释了这种现象。

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来源
《International conference on industrial lasers》|1999年||共2页
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Duanming Zhang; Weidong Ma; Xiaodong Wang; Zhongjun Chen; Desheng Xu; Ping Zheng; Mintao Huang; Meijun Zhang; Zhihua Li;
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中图分类激光技术、微波激射技术;
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I-V characteristics of K(Ta0.65Nb0.35)O3 thin film prepared by pulsed laser

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