Ripple formation in excimer laser irradiated silicon dioxide/silicon system

摘要

Excimer laser-induced surface structures at the interfaces of Silicon dioxide/Silicon have been investigated experimentally. It is found that a stable, fine and homogeneous ripple structure is preferentially generated under a comparatively largerlaser beam. The ripple periodicity seems to have no angular dependence and is enhanced with the increased laser pulses only before the irradiation of certain pulse numbers. The Initial substrate temperature also represents an important parameter which can be used to control the interface ripple structures. The correlation between the threshold laser pulse for the ripple formation and laser fluence, the threshold laser pulse and the oxide thickness is studied as well. This study will be helpful inunderstanding the physics of laser-induced ripple formation by some key parameters, and hence be useful in controlling the ripple structures within the range required for the laser texturing for the high density magnetic recording media.