Growth Behavior of Self-Formed Barrier Using Cu-Mn Alloys at 350 to 600°C

摘要

Cu-Mn alloys were deposited on plasma TEOS dielectric layer. A diffusion barrier layer was self-formed at the interface during annealing at elevated temperatures. The growth behavior followed a logarithmic rate law at 350 and 450°C. No interdiffusion occurred between the alloy film and TEOS after annealing at these temperatures for 100 h. At 600°C, grain-boundary grooving of the alloy film occurred on the barrier interface side. Estimated diffusivity at the alloy/barrier interface was of the same order as grain-boundary diffusivity of Cu.