The pressure contact IGBT is introduced as a suitable switch for pulse power applications. A comparison is made betwen the electromechanical characteristics of the pressure contact IGBT and a similarly rated substrate mounted device. Some significant differences, which may offer an advantage in some pulse power applications, are identified. Initial test results, under short pulse high di/dt conditions, are presented and some conclusions drawn as to the future expansion of these results to encompass additional pulse power operating conditions.
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