Heteroepitaxial growth of ZnO films by pld

摘要

Here we present our recent work on the fabrication of high crystaline and optical quality ZnO films on sapphire (001) by pulsed laser deposition. The influence of deposition parameter such as the substrate temperature, oxygen pressure, laser flucen, and pulse repetition rate on the crystalline quality of ZnO layers hasbeen studied. The omega -rocking curve FWHM of the (002) peak for the films grown at 750 deg C, oxygen pressure 10-5 Torr was 0.17 deg. The XRD- phi scans studies revealed that the films were epitaxial with a 30 deg rotation of the unit cell with respect to the sapphire to achieve a low energy configuration for epitaxial growth. The high degree of crystallinity was confirmed by ion channeling technique providing a minimum Rutherford backscattering yield of 2-3