808-nm Al-free InGaAsP/GaAs SCH SQW lasers fabricated by LPE

摘要

In this work, we report Al-free InGaAsP/GaAs separate confinement heterostructure single quantum well structures for lasers emitting at 808 nm are grown by enhanced liquid phase epitaxy. The highest continuous wave output power is 4 W for lasers with coated facts. The differential efficiency is 1.32 W/A. The record characteristic T$-0$/ of the laser is estimated to be about 218 K between 10$DGR@C and 40$DGR@C from the temperature dependence of the threshold current density J$-th$/.