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Reduction of 3rd order intermodulation distortion through the use of a high pass transmission line implementation of 'derivative superposition', and through the use of channel doped HEMTS

机译:通过使用“衍生叠加”的高通传输线实现,通过使用通道掺杂垫的高通传输线来减少3rd阶互调失真。

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This paper describes the implementation of an amplifier with low 3rd order intermodulation distortion by using a combination of "Derivative Superposition" and high pass lumped element transmission lines. Measured results of a surface mount component version of the circuit are given, showing suppression of 3rd order intermodulation distortion in the order of -20 dBm compared to that of a similar single HEMT circuit, together with improved gain compression performance at high input signal powers. We also examine the potential benefit of the use of Doped Channel HEMTs and estimate a potential reduction in 3rd order intermodulation distortion of 10 dB.
机译:本文通过使用“衍生叠加”和高通集元件传输线的组合,介绍了具有低3阶互调失真的放大器的实现。给出了电路的表面安装部件的测量结果,显示了与类似单个HEMT电路相比的-20 dBm的抑制为-20 dBm的顺序,以及高输入信号功率的改进的增益压缩性能。我们还检查使用掺杂通道骨折的潜在益处,并估计第3阶互调失真的潜在降低10dB。

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