首页> 外文会议>ASME International Mechanical Engineering Congress and Exposition >NUMERICAL SIMULATIONS OF TURBULENT NATURAL CONVECTION IN LATERALLY-HEATED CYLINDRICAL ENCLOSURES WITH BAFFLES FOR CRYSTAL GROWTH
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NUMERICAL SIMULATIONS OF TURBULENT NATURAL CONVECTION IN LATERALLY-HEATED CYLINDRICAL ENCLOSURES WITH BAFFLES FOR CRYSTAL GROWTH

机译:横向加热圆柱形外壳湍流自然对流的数值模拟晶体增长

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Ammonothermal crystal growth technique is one of the most effective methods used for growing Gallium Nitride (GaN) crystals. GaN crystals have wide applications in light emitting diodes (LEDs) or UV lasers. Three-dimensional large eddy simulations (LES) of natural convection in a laterally heated cylindrical reactor, using the commercial computational fluid dynamics (CFD) software ANSYS FLUENT, are presented for a Rayleigh number of Ra=8.8 ×10~6. The objective of the current calculations is to understand the effect(s) of opening area of the baffle on the flow pattern and temperature distribution inside the reactor. The baffles considered in this study are annular hollow discs with different opening areas. Three cases with total opening areas of 40%, 25% and 100% (baffle-less) are considered. Velocity and temperature distributions across the different planes and lines, are analyzed in order to obtain information on the flow and heat transfer processes (temperature maps) resulting from various baffle openings.
机译:氨热晶体生长技术是用于种植氮化镓(GaN)晶体的最有效方法之一。 GaN晶体在发光二极管(LED)或UV激光器中具有广泛的应用。使用商业计算流体动力学(CFD)软件ANSYS流畅的横向加热圆柱形反应器中的自然对流的三维大涡模拟(LES)。雷利数为RA = 8.8×10〜6。目前计算的目的是了解挡板对反应器内的流动模式和温度分布上的开口面积的效果。本研究中考虑的挡板是具有不同开口区域的环形空心盘。考虑了总开口区域的三种案例,25%,25%和100%(令人困惑)。分析了不同平面和线的速度和温度分布,以便获得有关由各种挡板开口产生的流动和传热过程(温度图)的信息。

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