The influence of preparation conditions on the visible photoluminescence band in porous silicon

摘要

A separation of the broad visible band of the photoluminescence into two subbands with maxima situated at 1.54 eV and 1.72 eV at room temperature and related to preparation conditions was observed in porous silicon films on (100) p-type wafers. The subbands at 1.72 eV and 1.54 eV were explained by the surface states and quantum size effect models, respectively.