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Organic Field-Effect Transistors Based on 3'-Flouro-2,2',6,6'-Tetraphenyl-4,4'-Dipyranylidene

机译:基于3'-氟-2,2',6,6'-四苯基-4,4'-二吡啶基的有机场效应晶体管

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In this work, 3'-flouro-2,2',6,6'-tetraphenyl-4,4'-dipyranylidene (3FDP) was originally synthesized and investigated with density functional theory (DFT) calculations, ultraviolet-visible spectroscopy (UV-Vis) and cyclic voltammetry (CV) in comparison with 2,2',6,6'-tetraphenyl-4,4'-dipyranylidene (DP) and 4'-flouro-2,2',6,6'-tetraphenyl-4,4'-dipyranylidene (4FDP). 3FDP-based organic field-effect transistors (OFETs) were fabricated with bottom contact configuration on bare SiO_2/Si substrate, 1,1,1,3,3,3-hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (OTS) treated substrate, respectively. The HMDS-treated device showed highest mobility of 4 × 10~(-4) cm~2 V~(-1) s~(-1), on/off ratio of 4 × 10~3 and threshold voltage of -10 V. Finally, vacuum deposited 3FDP films morphology was investigated by X-ray diffraction (XRD) analyses and the results showed higher crystallinity of HMDS-treated 3FDP film compared to the OTS-treated film, leading to a better FET performance.
机译:在这项工作中,最初合成3,6'-四苯基-4,4'-二嘧苯胺(3FDP),用密度官能理论(DFT)计算,紫外线可见光谱(UV -VIS)和循环伏安法(CV)与2,2',6,6'-四苯基-4,4'-二嘧苯基(DP)和4'-叶片-2,2',6,6'-四苯基-4,4'-二嘧啶(4FDP)。基于3FDP的有机场效应晶体管(OFET)分别在裸SiO_2 / Si底物,1,1,1,3,3-3-己二硅烷烷(HMDS)和八氯丙基三氯硅烷(OTS)处理的基材上分别在裸SiO_2 / Si底物中的底部接触构型制造。 HMDS处理的装置显示出4×10〜(-4)Cm〜2 V〜(-1)S〜(-1)的最高迁移率,开/关比为4×10〜3和-10V的阈值电压。最后,通过X射线衍射(XRD)分析研究了真空沉积的3FDP薄膜形态,结果表明,与OTS处理的薄膜相比,结果表明HMDS处理的3FDP膜的结晶度高,导致更好的FET性能。

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