首页> 外文会议>International Symposium on Microarchitecture >Exploring and Optimizing Chipkill-Correct for Persistent Memory Based on High-Density NVRAMs
【24h】

Exploring and Optimizing Chipkill-Correct for Persistent Memory Based on High-Density NVRAMs

机译:基于高密度NVRAM的持久存储器探索和优化Chipkill-校正

获取原文

摘要

Emerging high-density non-volatile random access memories (NVRAMs) can significantly enhance server main memory by providing both higher memory density and fast persistent memory. An unique design requirement for server main memory is strong reliability because uncorrectable errors can cause a system crash or permanent data loss. Traditional dynamic random access memory (DRAM) subsystems have used chipkill-correct to provide this reliability, while storage systems provide similar protection using very long ECC words (VLEWs). This paper presents an efficient chipkill-correct scheme for persistent memory based on high-density NVRAMs. For efficiency, the scheme decouples error correction at boot time from error correction at runtime. At boot time, when bit error rates are higher, the scheme uses VLEWs to efficiently ensure reliable data survival for a week to a year without refresh by correcting a large number of bit errors at low storage cost. At runtime, when bit error rates are lower, it reuses each memory block's chip failure protection bits to opportunistically correct bit errors at high performance. The proposal incurs a total storage cost of 27%. Compared to a bit error correction scheme, the proposal adds chip failure protection at no additional storage cost and at 2% average performance overhead.
机译:新兴高密度非易失性随机存取存储器(NVRAM)可以通过提供更高的内存密度和快速持久存储器来显着增强服务器主存储器。服务器主存储器的独特设计要求具有很强的可靠性,因为无法纠正的错误可能导致系统崩溃或永久数据丢失。传统的动态随机存取存储器(DRAM)子系统使用Chipkill-校正来提供这种可靠性,而存储系统使用非常长的ECC字(VLEW)提供类似的保护。本文介绍了基于高密度NVRAM的持久存储器的高效芯片芯片正确方案。为了效率,该方案在运行时在纠错时在启动时纠正纠错。在启动时,当误码率较高时,该方案使用VLEWS通过校正低存储成本的大量比特误差,有效地确保可靠的数据生存到一周至一年。在运行时,当误码率较低时,它将每个内存块的芯片故障保护位重用以在高性能的机会上正确校正比特错误。该提案总储存成本为27%。与误码校正方案相比,该提案在没有额外的存储成本和2%的平均性能开销中增加了芯片故障保护。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号