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Modeling and multi-objective optimization of 2.5D inductor-based Fully Integrated Voltage Regulators for microprocessor applications

机译:2.5D基于电感的全集成电压调节器的建模与多目标优化,用于微处理器应用

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This work presents the modeling and the multi-objective optimization of a 2.5D inductor-based Fully Integrated Voltage Regulator (FIVR) with respect to efficiency η and/or chip area power density α, i.e. based on the η-α-Pareto-front, for microprocessor applications. The Voltage Regulator consists of a four-phase interleaved buck converter operated in Continuous Conduction Mode (CCM). The rated power of the considered converter is 1W, and input and output voltages are constant and equal to V = 1.7V and V = 0.85V. The optimization employs analytical models for the switches, which reside on chip and are manufactured in a 32nm CMOS SOI process, and for the passive components, i.e. racetrack inductors with magnetic core material and deep-trench capacitors that are fabricated in a silicon interposer. The optimization procedure considers thermal aspects and disregards solutions that lead to excessive component temperatures. According to the optimization results, either high efficiencies, greater than 90%, or high area power densities, with chip power densities greater than 20W/mm and interposer power densities higher than 1.5W/mm are achievable. The optimized design point, selected from the η-α-Pareto-front, features an efficiency of 90.1%, interposer power density of 0.309W/mm, and a chip power density of 27.4W/mm.
机译:该工作介绍了基于2.5D基于电感的完全集成电压调节器(FIVR)的建模和多目标优化,相对于效率η和/或芯片区域功率密度α,即基于η-α-静脉前线,用于微处理器应用程序。电压调节器包括以连续导通模式(CCM)操作的四相交织降压转换器。所考虑的转换器的额定功率是1W,输入和输出电压是恒定的,等于V = 1.7V和V = 0.85V。优化采用驻留在芯片上的开关的分析模型,并在32nm CMOS SOI工艺中制造,并且用于被动部件,即具有磁芯材料和深沟电容器中的循环电容,其在硅中介层中制造。优化程序考虑热方面,无视导致过量的组件温度的溶液。根据优化结果,可以实现高于90%,高于90%或高的区域功率密度,芯片功率密度高于20W / mm,并且可实现高于1.5W / mm的芯片功率密度。优化的设计点,选自η-α-静脉前线,具有90.1%,插入式功率密度为0.309W / mm的效率,芯片功率密度为27.4W / mm。

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