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Electron Microscopy Characterizations and Atom Probe Tomography of Intergranular Attack in Alloy 600 Exposed to PWR Primary Water

机译:合金600中晶体攻击的电子显微镜特征和原子探测层析成像暴露于PWR初级水

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Detailed examinations of intergranular attack (IGA) in alloy 600 were performed after exposure to simulated PWR primary water at 325°C for 500 h. High-resolution analyses of IGA characteristics were conducted on specimens with either a 1 μm diamond or 1200-grit SiC surface finish using scanning electron microscopy, transmission electron microscopy and atom probe tomography techniques. The diamond-polish finish with very little preexisting subsurface damage revealed attack of high-energy grain boundaries that intersected the exposed surface to depths approaching ~2 μm. In all cases, IGA from the surface is localized oxidation consisting of porous, nanocrystalline MO-strucrure and spinel particles along with regions of faceted wall oxidation. Surprisingly, this continuous IG oxidation transitions to discontinuous, discrete Cr-rich sulfide particles up to ~50 nm in diameter. In the vicinity of the sulfides, the grain boundaries were severely Cr depleted (to <1 at%) and enriched in S. The 1200 grit SiC finish surface exhibited a preexisting highly strained recrystallized layer of elongated nanocrystalline matrix grains. Similar IG oxidation and leading sulfide particles were found, but the IGA depth was typically confined to the near-surface (-400 nm) recrystallized region. Difference in IGA for the two surface finishes indicates that the formation of grain boundary sulfides occurs during the exposure to PWR primary water. The source of S remains unclear, however it is not present as sulfides in the bulk alloy nor is it segregated to bulk grain boundaries.
机译:在325℃下暴露于模拟PWWR初级水500小时后进行合金600中的晶间攻击(IgA)的详细检查。使用扫描电子显微镜,透射电子显微镜和原子探测断层扫描技术,在具有1μm金刚石或1200臂SiC表面光洁度的试样上进行IgA特性的高分辨率分析。钻石抛光表面非常小的预先存在的地下损伤揭示了与接近〜2μm的深度曝光表面的高能晶粒边界的攻击。在所有情况下,来自表面的IgA是由多孔,纳米晶体旋转和尖晶石颗粒组成的局部氧化,以及刻面的壁氧化区域。令人惊讶的是,这种连续的IG氧化转变为不连续的,离散的Cr富含硫化物颗粒直径〜50nm。在硫化物附近,晶界是严重的Cr耗尽(至<1at%)并富含S. 1200砂砾SiC光学表面表现出预先存在的纳米晶体基质基质的重结晶层。发现了类似的Ig氧化和前导硫化物颗粒,但IgA深度通常限制在近表面(-400nm)重结晶区域。两个表面饰面的IgA差异表明在暴露于PWR初级水期间发生晶界硫化物的形成。 S的来源仍然不清楚,但是它不作为散装合金中的硫化物存在,也不存在于散装晶界中。

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