Carrier dynamic measurement of Be doped multi-quantum-well InGaAs-InAlAs material systems at 1550 nm for THz applications

摘要

Carrier dynamic for Be doped multi-quantum-well InGaAs-InAlAs material systems are measured using an infrared pump-probe measurement system at 1550 nm wavelength range. The carrier life-time for as-grown materials and for materials with two different levels of Be doping annealed at different temperatures are measured and the results are compared. Subpicosecond carrier lifetimes are obtained.