The objective of this work was to study the electrodeposition of silicon in molten KF-LiF (eut)-K_2SiF_6 (5 mol%) on Ag and Si substrates at 550 °C and 800°C. In addition electrochemical studies of the system were performed on silver, tungsten and glassy carbon substrates at 800°C. The electrochemical measurements confirmed that the reduction of Si is diffusion controlled and occurs in two steps. On silver, dense, coherent films with good adhesion and no inclusions of salt were obtained at 800°C at the growth rate 52 μm/hour. On silicon, the microstructure seemed to consist of small "randomly" oriented crystals. At 550 °C, the deposit became porous and powderish both on silver and silicon substrates. The low temperature combined with the relatively high current densities applied was believed to hinder crystal growth.
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