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Applications of Nuclear Reaction Analysis for Semiconductor Industry

机译:半导体工业核反应分析的应用

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Many thin film samples used in the semiconductor industry contain C, N and O. The detection limits and accuracy obtained by Rutherford Backscattering Spectroscopy (RBS) measurement are limited due to the small cross section values. High energy non-Rutherford backscattering is often used to enhance the sensitivities. But non-Rutherford cross section values are irregular and can not be calculated as normal Rutherford backscattering values. It is also difficult to find an appropriate energy window that for all these elements, and high-energy ions are needed. In this paper, the Nuclear Reaction Analysis (NRA) method is used to simultaneously measure C, N and O. several applications in the semiconductor research, development, and manufacturing areas are presented.
机译:在半导体工业中使用的许多薄膜样品包含C,N和O.由于横截面值小,由Rutherford反向散射光谱(RBS)测量获得的检测限制和精度受到限制。高能量非Rutherford反向散射经常用于增强敏感性。但非Rutherford横截面值是不规则的,不能计算为正常的Rutherford反向散射值。对于所有这些元件,也难以找到适当的能量窗口,并且需要高能的离子。在本文中,核反应分析(NRA)方法用于同时测量C,N和O.在半导体研究,开发和制造领域的几种应用。

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