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Recent Progress in the Vacuum Deposition of OLEDs with Feature Sizes ≤ 20umUsing a Contact Shadow Mask Patterned In-situ by Laser Ablation

机译:具有特征尺寸的OLED真空沉积的最新进展≤20Umusing通过激光烧蚀地原位图案化了接触阴影掩模

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We report progress in the development of a new technique that has the potential to enable the vacuum deposition of OLEDs with feature sizes ≤ 20um, and hence high resolution OLED displays. An OLED device with 16um by 130um sub-pixel size has been successfully demonstrated utilizing the novel idea of the in-situ shadow mask patterning method showing the capability to achieve high resolution OLED patterning. In the approach proposed here, two sheets of polyimide film are mounted on the bottom electrode of an OLED. The top sheet of the two stacked sheets is patterned insitu by laser ablation to create apertures to function as a deposition shadow mask. The lower sheet, which serve as a protective layer to the electrode during the laser ablation step is then removed, and OLED materials are deposited through the now patterned top sheet. Since mask alignment is not required in this approach, the technique circumvents the resolution limitations imposed by the difficulty of aligning shadow masks in the conventional techniques, and allows achieving high resolution pixel patterning. Furthermore, shadow effects, another factor that limits resolution in conventional techniques, can be reduced due to the use of very thin polyimide film (~7.5um) that is directly held on the substrate by electrostatic force. In principle, by applying this technique to the standard three color side-by-side sub-pixel matrix scheme, a resolution and aperture ratio of 338ppi and 60%, respectively, can be expected, which is estimated based on the fact that the width of the deposited material is 25um for the 16um wide electrode.
机译:我们报告了开发新技术的进展,该技术具有能够使具有特征尺寸≤20um的OLED的真空沉积,因此高分辨率OLED显示器。利用原型荫罩图案化方法的新颖思想成功地证明了具有160um的OLED器件,其原位暗影掩模图案化方法显示出实现高分辨率OLED图案的能力。在此提出的方法中,两片聚酰亚胺膜安装在OLED的底部电极上。通过激光消融将两个堆叠片材的顶床进行图案化,以产生孔以用作沉积阴影掩模。然后除去在激光烧蚀步骤期间用作电极的保护层的下片,通过现在图案化的顶片沉积OLED材料。由于这种方法不需要掩模对准,因此该技术通过难以在传统技术中对准阴影掩模的难度来避免的分辨率限制,并且允许实现高分辨率像素图案。此外,由于使用直接在基板上通过静电力直接保持在基板上,可以降低暗影效果,限制常规技术中的分辨率的另一个因素。原则上,通过将该技术应用于标准的三种颜色并排副子像素矩阵方案,可以预期338ppi和60%的分辨率和孔径比,这是基于宽度的事实估计沉积的材料是16um宽电极的25um。

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