The InGaN-based Light Emitting Diodes (LEDs) with a wider lateral etched InGaN active layer were fabricated through the photoelectrochemical (PEC) etching process with an 800W illuminated Hg lamp, an unintentionally doped GaN filter, and immersed in a 2.2 M potassium hydroxide (KOH) solution. The lateral etched LED structures were achieved by using a GaN filter and InGaN as a sacrificial layer with a 2.57μm lateral etching width. The electroluminescence (EL) wavelengths of InGaN/GaN multi-quantum-well (MQW) active layer were observed at 460nm for standard LED and 455.7 nm for lateral etching LED with 20mA DC injection current. The peak EL emission wavelength had 4.3 nm-blueshift phenomenon in the lateral etched LED compared to standard one that was caused by partial reducing the compress strain in InGaN/GaN active layers. The light output power of the lateral etched LED had 54% enhancement compared to the standard LED. By using the PEC lateral etching process, the selective lateral etched LED structure have higher light scattering process and higher carrier recombination efficiency with lower piezoelectric field for higher efficiency optical device application.
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