High Rollover Power from 8xx nm and 9xx nm Asymmetric Epitaxial Laser Structures with Optical Trap

摘要

The quest for high operating powers from diode lasers has been stimulated in recent years by the increasing demands of industrial users and by programs such as SHEDS. Record powers and power densities of 19 W from 100 μm (190 mW/μm) [1] and 18.5 W from a 90 μm aperture (205 mW/μm) [2] were reported in 2007 for devices operating in the 9xx nm range (915 to 980 nm). Powers higher than 20 W from 100 μm [3] and 21 W from 90 μm [4] have already been reported in 2008 by the same teams. While high efficiency was a major goal of the SHEDS program, the industrial market is more interested in obtaining the highest reliable output power per device, which eventually will lead to reductions in the price per Watt. From the device design perspective, both applications impose similar conditions: low attenuation coefficient, low series resistance and low thermal resistance. A key difference between the applications is related to the device length: a high efficiency can be more easily obtained from short devices, whereas the highest powers can only be obtained from long devices.