In order to verify and control the properties of carbon nanotubes (CNTs), heteroatoms were introduced into the lattice of CNTs. In comparison with Nitrogen and Boron, the experimental synthesis of Si-doping were not fully investigated due to the larger atom size and preference to sp3 hybridization. Here, Si atoms were introduced into CNTs via in-situ chemical vapor deposition (CVD) method using methyltrichlorosilane (MTS) as silicon source. Different dopant concentrations were added to investigate the optimal condition. Electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy were used to characterize the structure and composition of the nanotubes. The results indicated that the highest atomic ratio of Si was obtained with 25% H_2(MTS) and the incorporation of Si atoms show significant impact on both macroscopic morphology and inner structure of CNTs. The present study verified that the Si doping of CNTs via this method was probable and could shed lights on further research.
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