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OXIDATION BEHAVIOR OF ZIRCONIUM DIBORIDE-SILICON CARBIDE COMPOSITES

机译:锆二硼化锆 - 碳化硅复合材料的氧化行为

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ZrB2 and ZrB2-SiC composites containing 40 and 60 mass% SiC were prepared by spark plasma sintering (SPS) at temperatures of 1810 and 1770°C for 300 s under a pressure of 40 MPa. Oxidation behavior of these samples was characterized by exposing them to 1400, 1500, and 1600°C in an ambient atmosphere for 180 min, and by measuring the weight gains of the sample. The oxide layers were characterized by field emission scanning electron microscopy with energy dispersive spectroscopy analysis. At 1400 and 1500°C, layered structures consisted of a SiO2 rich outer layer, a thin ZrO2-SiO2 layer, ZrO2-containing layer and unaffected ZrB2-SiC. However, at 1600°C, active oxidation of SiC was observed and changed oxidation mechanism significantly. The consumption of SiC particles resulted in a formation of oxide regions mainly composed of SiO or SiO2 and ZrO2. Unaffected ZrB2-SiC region was not observed at 1600°C.
机译:含有40和60质量%SiC的ZrB2和ZrB2-SiC复合材料通过火花等离子体烧结(SPS)在1810和1770℃的温度下在40MPa的压力下进行300℃。这些样品的氧化行为的特征在于在环境气氛中暴露于1400,1500和1600℃,以持续180分钟,并通过测量样品的重量增益。通过具有能量分散光谱分析的现场发射扫描电子显微镜的氧化物层的特征在于。在1400和1500℃下,分层结构由SiO 2富含量的外层,含薄的ZrO2-SiO 2层,含ZrO2层和未受影响的ZrB2-SiC。然而,在1600℃下,观察到SiC的主动氧化并显着改变氧化机制。 SiC颗粒的消耗导致形成主要由SiO或SiO 2和ZrO2组成的氧化物区域。在1600°C下未观察到未受影响的ZrB2-SiC区域。

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