The article concerns the implications of the plot with a negative differential resistance in current-voltage characteristics of silicon diode structures under the influence of a relatively high level of a microwave power probe signal of a nonlinear radar. The possibility of registering non-linear radar spurious harmonics of random generators in the facility study is theoretically justified. It is shown that the random generator can also emit chaotic oscillations, which can be regarded as information to identify the embedded device by means of a nonlinear radar. The use of two additional modes of identification devices embedded in a nonlinear radar is proposed: on a multiple harmonic and by the presence of chaotic signals, which greatly improves the efficiency of the nonlinear radar in the technical protection of information.
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