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Measurement of source coupled logic 'exclusive OR' circuit ring oscillator of SOI Si vertical dual carrier field effect transistor with effective channel length of 5-30nm

机译:测量SOI SI垂直双载体场效应晶体管的SOI耦合逻辑“独占或”电路环振荡器,具有5-30nm的有效通道长度的晶体管

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Source coupled logic (SCL) flip flops of SOI Si "vertical dual carrier field effect transistor" (VDCFET) with effective channel length of 5-30nm have been designed, fabricated and measured. These development works are presented in three accompanied papers submitted to this conference. Presented in this paper are the measured circuit performance of source coupled logic (SCL) CPU switching circuits of SOI Si VDCFET with effective channel length of 5-30 nm, including ring oscillators and "exclusive OR" circuits.
机译:设计,制造和测量了具有有效通道长度的SOI SI“垂直双架空效应晶体管”(VDCFET)的SOI SI“垂直双载波场效应晶体管”(VDCFET)的源耦合逻辑(SCL)触发器。这些开发工程在提交本次会议上的三篇伴奏文件中呈现。本文提出的是SOI SI VDCFET的源耦合逻辑(SCL)CPU切换电路的测量电路性能,具有5-30nm的有效通道长度,包括环形振荡器和“独占或”电路。

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