Simulation of semiconductor mode-locked ring lasers with monolithically integrated passive pulse shaping elements

摘要

We present a model to simulate passive mode-locking in InP/InGaAsP monolithically integrated extended cavity ring lasers that include both active and passive components. For the development of integrated femtosecond semiconductor lasers we have extended the design for a PML ring laser with integrated pulse shaping components. Simulations of these designs show output pulse durations down to 300 fs.