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Magnetic Field-Enhanced Shape Memory Effect in Ni51.6Mn23.4Ga25 Single Crystals

机译:Ni51.6mn23.4ga25单晶的磁场增强形状记忆效果

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We have performed the various measurements of the transformation strain with and without the different external magnetic fields on the Ni_(51.6)Mn_(23.4)Ga_(25) single crystals. A stress-free and two-way thermoelastic shape memory, with -1.15 percent strain (negative sign represents the shrinkage) and 6 K temperature hysteresis, has been found in the single crystal. The deformation can be enhanced up to -2.35 percent with a bias field 1.2 T applied along the measurement direction of the parent phase [001] crystallographic axial direction. Turning the field laterally applied to [010] and [100] directions of the parent phase, however, the strain was suppressed by the field of 1.2 T to 0.56 percent and -0.55 percent, respectively, a different deformation scene. Moreover, it is found that even the field of 1.2 T does not have a significant influence on the phase transition temperature and the temperature hysteresis, which indicates that the mechanism of field-enhanced strain in this material is the twin boundary motion.
机译:我们已经在NI_(51.6)MN_(23.4)GA_(25)单晶上的不同外部磁场进行了各种测量。在单晶中发现了一种无应力和双向热弹性形状记忆,具有-1.15%的菌株(负符号代表收缩)和6k温度滞后。可以通过沿着母相的测量方向施加的偏置场1.2T来提高变形至-2.35%,沿父阶段的测量方向施加晶体轴向。然而,将横向施加到亲本相的[100]方向的磁场,然而,菌株分别抑制了1.2吨至0.56%,分别为不同的变形场景。此外,发现即使是1.2 T的领域也没有对相变温度和温度滞后产生的显着影响,这表明该材料中的场增强应变的机制是双边界运动。

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