Problems of designing of electron optical system (EOS) for electron beam valves (EBV) are considered from the point of view of increase of specific volumetric parameters of devices. The new criterion of quality of electron-optical system of EBV is offered. The approach to increase of specific EBV switching capacity is considered. Comparison of a method by increase of number of cathode units and by increases current emission from the cathode is carried out by means of estimation of EOS index of efficiency. Examples of developed EOS are given, their advantages and disadvantages are considered.
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