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Sheath expansion dynamics during plasma implantation of insulating materials

机译:绝缘材料等离子体植入过程中的鞘膨胀动力学

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Summary form only given. Plasma immersion ion implantation of insulating materials is complicated, in spite of practical importance with regard to basic research, process development, as well as industrial applications. The capacitance induced by the insulating sample decreases the bombardment energy of the incident ions. The plasma sheath is subsequently deformed due to a different surface potential when the sample and target holder is integrated and treated as one entity. Consequently, nonuniformity of the incident dose and low implant dose results. In this work, plasma sheath formation and propagation are investigated during plasma implantation of insulating polymeric films. A movable probe is used in the experiments and the collected electron current is monitored to determine the time-dependent and space-dependent plasma-sheath dynamics. Two-dimensional numerical simulation is also employed to study the phenomenon. The geometrical configuration and physical properties of the samples are observed to have a critical influence on the plasma sheath dynarnics Our experimental and theoretical results and the related mechanism are discussed.
机译:摘要表格仅给出。尽管关于基础研究,工艺开发以及工业应用,但是,尽管对基本研究,工艺开发以及工业应用以及工业应用,但绝缘材料的等离子体浸入离子植入复杂复杂。由绝缘样品引起的电容降低了入射离子的轰击能量。随后由于当样品和靶支架被整合并被视为一个实体时,等离子体鞘随后由于不同的表面电位而变形。因此,入射剂量和低植入剂剂量结果的不均匀性。在该工作中,在绝缘聚合物膜的等离子体植入过程中研究了等离子体鞘形成和繁殖。在实验中使用可移动探头,并监测收集的电子电流以确定时间依赖性和空间依赖的等离子体鞘动态。二维数值模拟也用于研究现象。观察到样品的几何构型和物理性质对等离子体护套Dynarnics具有临界影响我们的实验和理论结果,并且讨论了相关机制。

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