Structural, Optical and Photovoltaic Studies on Schottky Barrier Devices using 1,4-Dihydroxy-9, 10-Anthraquinone Films

摘要

1,4-Dihydroxy-9,10-anthraquinone films has been grown by hot wall technique onto the glass substrates kept at different temperatures in a vacuum of 10~(-5) Torr. These films are systematically characterized by NMR, optical absorption (IR, visible, near-UV), X-ray diffraction and scanning electron microscopy. Besides these, the electrical properties of the films are determined in the temperature range 290-370 K. Hexagonal type of crystallites as large as 7 μm are observed in the case of films deposited at 348K. Analysis of the optical absorption measurements indicates that interband transition energies of films lie in the range 1.70-2.40 eV. The current-voltage characteristics of films show ohmic behaviour of conduction. The substrate temperature appears to influence the properties of the films. The FTO/1,4-dihydroxy-9,10-anthraquinone/Al Schottky barrier device has been prepared by depositing 1,4-dihydroxy-9,10-anthraquinone onto FTO coated glass slides by hot wall technique. The device so obtained is studied for its current density-voltage (J-V) characteristics.