This paper describes the ongoing flexible PV technology program at the Indian Institute of Technology Bombay. Flexible solar cells are fabricated by depositing amorphous silicon (a-Si) on stainless steel substrate. We have relied on hot-wire CVD technology to deposit films at 110 C, since conventional PECVD processes have proven to be inadequate at that temperature. The primary requirement was a high doping concentration of the p-type and n-type a-Si layers. The efficiency of the single-junction PV cells under simulated AM1.5 global radiation initially was 2.8%, which improved to 4.8% following optimization. Further improvements in efficiency will require development of a technique for low temperature texturing of the transparent conducting oxide film.
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