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Pulsed magnetron sputtering system with rotating graphite cathode for diamond-like carbon films deposition

机译:具有旋转石墨阴极的脉冲磁控溅射系统,用于金刚石碳膜膜沉积

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Extended cylindrical magnetron sputtering system with rotating 600-mm long and 90-mm diameter graphite cathode and pulsed power supply voltage generator were developed and fabricated. Time-dependent Langmuir probe characteristics together with deposited carbon film thickness data were acquired in various positions of the probe and witness samples relatively the cathode. It was shown that ratio of ions flux to carbon atom flux for pulsed magnetron discharge mode was equal to /spl Phi//sub i///spl Phi//sub C/ = 0.2 and did not depend on the discharge current in the range I/sub d/ = 10 - 60 A since both the plasma density and the film deposition rate were found approximately proportional to the discharge current. In spite of this fact carbon film structure was found to be strongly dependent on the discharge current. Grain size increased from 100 nm at I/sub d/ = 10 - 20 A to 500 nm at I/sub d/ = 40 - 60 A. To deposit fine-grained hard nanocrystalline or amorphous carbon coating current regime with l/sub d/ = 20 A was chosen. Pulsed negative substrate bias voltage (/spl tau/ = 40 /spl mu/s, U/sub b/ = 0.5-10 kV) synchronized with magnetron discharge pulses. Pulsed bias voltage of U/sub b/ = 3.4 kV was shown to be optimum for a hard carbon film deposition. Lower voltages were not sufficient for amorphization of a growing graphite film, while higher voltages led to excessive ion bombardment and effects of recrystalization and graphitization.
机译:开发并制造具有旋转600mm长和90mm直径的石墨阴极和脉冲电源电压发生器的扩展圆柱形磁控溅射系统。在探针的各种位置获取与沉积的碳膜厚度数据一起的时间依赖性的Langmuir探针特性,并且目的地采样相对阴极。结果表明,离子通量与脉冲磁控磁阻放电模式的碳原子通量的比率等于/ SPL PHI //子I /// SPL PHI //子C / = 0.2,并且不依赖于该范围内的放电电流I / Sub D / = 10-60a,因为发现等离子体密度和膜沉积速率均近似与放电电流成比例。尽管存在这种情况,发现碳膜结构强烈取决于放电电流。在I / sub d / = 40-60a的I / sum d / = 10-20a至500nm处的粒度从100nm增加到500nm。用l / sim d沉积细粒粒子的硬纳米晶体或无定形碳涂层电流状态/ = 20 A被选中。脉冲负基板偏置电压(/ SPL TAU / = 40 / SPL MU / S,U / SUB B / = 0.5-10 kV)与磁控管放电脉冲同步。显示U / Sub B / = 3.4kV的脉冲偏置电压对于硬碳膜沉积,最佳。较低电压不足以用于生长石墨膜的非晶化,而较高的电压导致过度离子轰击和再串化和石墨化的影响。

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