480×8 hybrid HgCdTe infrared focal plane arrays

摘要

This paper explains the technologies used for high-performance long linear arrays based on HgCdTe/CMOS hybrid multiplexers with bidirectional Time Delay and Integration (TDI) functions, and it describes the development of the first high-resolution Forward Looking Infrared (FLIR) system with the SXGA format. Long-Wavelength Infrared (LWIR) photodiode arrays are fabricated using liquid-phase epitaxially grown HgCdTe on a CdznTe substrate. Each photodiode array consists of 480×8-element n+/n-on-p diodes formed by B+ implantation. Each photodiode is surrounded by a crosswise drain diode to define the detection area. The diodes with a 10.3-μ m cutoff wavelength had a typical zero-bias resistance of 10 M Ω and a shunt resistance of 1GΩ. Four CMOS Read Out Integrated Circuits (ROICs) were used for bidirectional TDI and multiplex operations where each ROIC summed up and multiplexed eight signals from 120 channels. The ROIC also includes pixel deselection and gain control circuits along with the corresponding memory and writing means. The Infrared Focal Plane Arrays (IRFPAs) had a typical Noise Equivalent Temperature Difference (NETD) of 18 mK after TDI with F/1.55 optics and 10-μ5 integration. The FLIR system using the 480×8 IRFPA demonstrated a high spatial resolution of 1280 horizontal lines by 960 vertical lines (SXGA format) and NETD of less than 30 mK. The unique algorithm for image enhancement was successfully confirmed to be efficient.