InP membrane-based microlasers on silicon wafer: microdisks VS photonic crystal cavities

摘要

Microdisk and photonic crystal (PC) cavity lasers were fabricated on InP based heterostructures integrated on silicon wafers. Single InGaAs quantum well, multiple InGaAs quantum wells and InAs quantum wires are used as active layers. Laser emission is achieved on quantum well based microdisk and PC microcavities. A comparison is made between different combinations of microcavity shapes and active material.