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Preparation and properties of Bi-system perovskite oxide thin films by sputtering method

机译:溅射法制备Bi-System Perovskite氧化物薄膜的制备与性能

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Ferroelectric (Bi/sub 0.5/Na/sub 0.5/)TiO/sub 3/ thin films were synthesized on various kinds of substrates such as MgO[100], glass and Pt/MgO[100] by the rf-magnetron sputtering technique. Single perovskite thin films were prepared on MgO[100] and Pt/MgO[100]. The films deposited on MgO[100] and Pt/MgO[100] substrates showed an a-axis orientation. The film obtained on Pt/MgO[100] at a substrate temperature of 500/spl deg/C, using a (Bi/sub 0.50/Na/sub 0.75/)TiO/sub 3/ powder target had P/sub r/ of 2.3 /spl mu/C/cm/sup 2/ and E/sub c/ of 20 kV/cm. The hysteresis loop of the film did not change up to 3 /spl times/ 10/sup 6/ switching cycles.
机译:通过RF-磁控溅射技术在各种基材如MgO [100],玻璃和Pt / MgO [100]上合成铁电(Bi / Sub 0.5 /亚/亚0.5 /)TiO / Sub 3 /薄膜。在MgO [100]和Pt / MgO [100]上制备单个钙钛矿薄膜。沉积在MgO [100]和Pt / MgO [100]基板上的薄膜显示出轴方向。使用A(Bi / Sib 0.50 / Na / Sub 0.75 /)TiO / Sub 3 /粉末靶的Pt / MgO [100]在Pt / MgO [100]上获得的薄膜(Bi / Sup 0.50 / Na / sub 0.75 /)p / sub r / m 2.3 / SPL mu / c / cm / sup 2 /和e / sub c / of 20 kV / cm。薄膜的滞后回路没有改变到3 / SPL时间/ 10 / SUP 6 /切换循环。

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