首页> 外文会议>International conference on photorefractive effects, materials, and devices >Electrical fixing of photorefractive gratings in SBN:60
【24h】

Electrical fixing of photorefractive gratings in SBN:60

机译:SBN中的光折射光栅电气定位:60

获取原文

摘要

We present the result of our investigations on electrical fixing in (SBN:60). Two electrical fixing techniques which result in very high diffraction efficiencies are discussed and compared to previous publications on electrical fixing. Constant and varying depoling voltages around the coercive field are applied along the c-axis during and after holographic recording in the crystal. The holographic grating is written with two mutually coherent, ordinarily polarized Argon beams at 514 nm. The diffraction efficiency is monitored with an extraordinarily polarized, low power He-Ne beam. The writing beams are expanded to fill the crystal to improve the stability of the reversed domains. The diffraction efficiency in the recording stage is more than an order of magnitude higher than that of a grating written without an external field. We achieve diffraction efficiencies as high as 95% with a gradually increasing negative voltage, while a positive voltage produces a revealed grating with a diffraction efficiency of up to 15%.
机译:我们介绍了我们对(SBN:60)的电气定位的调查结果。讨论了两种导致非常高的衍射效率的电气定影技术,并与先前的电气定影出版物进行比较。在晶体中全息记录期间和之后沿C轴施加矫顽磁场周围的恒定和变化的降解电压。全息光栅用在514nm处用两个相互相干的,通常偏振的氩气束写。用极其极化的低功率He-Ne梁监测衍射效率。写入光束被扩展以填充晶体以改善反向域的稳定性。记录阶段中的衍射效率大于没有外部场的光栅的数量级。我们实现高达95%的衍射效率随着负电压逐渐增加,而正电压产生衍射效率高达15%的显示光栅。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号