Resonant excitation of the non-steady-state photocurrents in semiconductors with shallow energy levels

摘要

We analyze resonant excitation of non-steady-state photocurrents in semiconductors with shallow energy levels. We predict the appearance of several maxima on the frequency dependence of non-steady-state photocurrent excited in semiconductor material. We show that both the effective and actual mobilities of photocarriers can be estimated from characteristic resonant frequencies.