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UV Raman study of A_1(LO) and E_2 phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) Sapphire substrates

机译：在（0001）蓝宝石基材上通过金属 - 有机化学气相沉积在（0001）蓝宝石衬底上的InGaN合金中A_1（LO）和E_2声子的UV拉曼研究

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We report on UV Raman spectroscopy of In_xGa_(1-x)N thin films grown on (0001) sapphire substrates using a specially designed metal-organic chemical vapor deposition (MOCVD) reactor. Eight films were examined in the compositional range 0

机译：我们通过专门设计的金属 - 有机化学气相沉积（MOCVD）反应器在（0001）蓝宝石基材上生长的in_xga_（1-x）n薄膜的UV拉曼光谱报告。在组成范围0

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《MRS Meeting》|2001年||共6页
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Dimitri Alexson; Leah Berman; Robert J. Nemanich; Mitra Dutta; Michael A. Stroscio; C. A. Parker; S. M. Bedair; N. A. El-Masry; Fran Adar;
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1. Edge-Emitting Electroluminescence polarization Investigation of InGaN/GaN Light-Emitting Diodes Grown By Metal-Organic chemical Vapor Deposition on Sapphire (0001) [J] . D.I.Florescu, D.S.Lee, S.M.Ting, Journal of Electronic Materials . 2003,第11期

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2. Semipolar (11(2)2) and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition [J] . Sheng-Rui Xu, Ying Zhao, Ren-Yuan Jiang, 中国物理：英文版 . 2017,第002期

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3. Characterization of a-plane InGaN light-emitting diodes with a SiN_x interlayer grown on a patterned sapphire substrate by metal-organic chemical vapor deposition [J] . Geunho Yoo, Daehong Min, Kyseung Lee, Japanese journal of applied physics . 2014,第11期

机译：通过有机金属化学气相沉积法在带图案的蓝宝石衬底上生长具有SiN_x中间层的a面InGaN发光二极管的特性
4. UV RAMAN STUDY OF A_1(LO) AND E_2 PHONONS IN InGaN ALLOYS GROWN BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION ON (0001) SAPPHIRE SUBSTRATES [C] . Fran Adar, N.A. El-Masry, S.M. Bedair, MRS Meeting . 2001

机译：在（0001）蓝宝石基材上通过金属 - 有机化学气相沉积在（0001）蓝宝石衬底上的InGaN合金中A_1（LO）和E_2声子的UV拉曼研究
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机译：冶金化学气相沉积在蓝宝石和ALN模板上生长的Ingan / GaN多量子井太阳能电池的比较研究

UV Raman study of A_1(LO) and E_2 phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) Sapphire substrates

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