TOPOLOGICAL LAYER SWITCH TECHNIQUE FOR MONOLITHICALLY INTEGRATED ELECTROSTATIC XYZ-STAGE

摘要

We report a monolithic XYZ-stage with electrostatic comb-mechanisms integrated in only two silicon layers and by three photolithography steps that topologically switches the allocation of layer for electrical and elastic components. The XY-stage moved in the X- and the Y-direction by 19 μm independently, and also in the diagonal direction. We have successfully demonstrated maximum 2.12 μm in the Z-direction with applied voltage of 200 V.