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Ion induced luminescence of silica glasses and optical fibers

机译:二氧化硅玻璃和光纤的离子诱导发光

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Ion induced luminescence was studied for SiO_2 glasses and SiO_2 based optical fiber materials with different hydrogen and oxyhydrate concentration. The luminescence of the visible wavelengths was measured during the irradiation of protons and also heavier ions with low (5~10 keV) and high (0.2 ~ 2 MeV) energies, at a temperature range between 295 and 600 K. Hydrogen concentration profiles were also examined by the ion beam analysis techniques to compare the nominal OH values. In addition to a prominent broad peak of 460 nm, characteristic peaks were detected at around 390 nm and 660 nm, depending on the OH contents. For fused silica specimens with lower OH, however, a peak at 390 nm was found at a small dose and its intensity decreased quickly with an increase of the ion dose. For synthesized silica with higher OH concentration, a small peak was found at 650 nm, corresponding to the non-bonding-oxygen-hole-center, while the 390 nm peak not appeared. Except for the low-OH synthesized silica, there existed a large amount of hydrogen, which does not form OH. The origin of the luminescence and the damage process will be discussed in connection with the nuclear and electronic energy loss by the penetrating energetic ions.
机译:采用不同氢气浓度的SiO_2玻璃和基于SiO_2的光纤材料研究了离子诱导的发光。在质子辐射期间测量可见波长的发光,并且在295和600k的温度范围内,具有低(5〜10keV)和高(0.2〜2meV)和高(0.2〜2meV)能量的离子。由离子束分析技术检查以比较标称OH值。除了突出的宽峰值为460nm之外,根据OH含量约为390nm和660nm检测特征峰。然而,对于具有较低OH的熔融二氧化硅样品,在小剂量下发现390nm的峰值,并且其强度随着离子剂量的增加而迅速降低。对于具有较高OH浓度的合成二氧化硅,在650nm处发现小峰,对应于非粘结 - 氧气中心,而不出现390nm峰。除了低OH合成二氧化硅外,存在大量的氢,其不形成哦。发光的起源和损坏过程将与穿透能量离子的核和电子能量损失有关。

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