Evaluation of the Compton camera method for spectroscopic imaging with ambient-temperature detector technology

摘要

A prototype Compton camera using ambient-temperature semiconductor detectors is developed for gamma ray spectroscopic imaging. Two camera configurations are evaluated, one using an intrinsic silicon detector for the front plane detector and the other using a CdZnTe detector for the front plane. Both configurations use a large-volume coplanar grid CdZnTe detector for the back plane. The effect of detector noise, energy resolution, and timing resolution on camera performance is described. Technical issues underlying the development of Compton cameras for spectroscopic imaging are presented and imaging of radioactive sources is demonstrated.